The Samsung 990 1TB NVMe PCIe 4.0 M.2 2280 SSD delivers sequential read speeds of up to 7,150 MB/s and sequential write speeds of up to 6,450 MB/s, maximizing the bandwidth of your system's PCIe 4.0 interface. By utilizing an advanced Samsung in-house controller and V-NAND TLC technology, this drive provides high-speed data access for demanding workloads without requiring a dedicated DRAM cache.
Responsive storage built for everyday gaming and productivity
This 1TB solid state drive is engineered for users who demand fast boot times, rapid application loading, and smooth file transfers. It handles heavy multitasking workloads with ease, delivering random performance of up to 700,000 IOPS read and 1,100,000 IOPS write to keep system responsiveness high. Built-in features like TRIM and S.M.A.R.T. support allow your operating system to actively manage drive health and maintain peak performance over time.
High-speed PCIe 4.0 throughput using Host Memory Buffer technology
The drive employs a DRAM-less architecture, which helps manage power and heat while maintaining excellent throughput. To compensate for the lack of dedicated onboard DRAM, it supports Host Memory Buffer (HMB) technology. This feature allows the SSD to use a small portion of your system's main memory (RAM) as its cache, ensuring fast access to lookup tables. Combined with Samsung V-NAND TLC and an Auto Garbage Collection Algorithm, the drive maintains consistent write speeds even during extended file operations.
Optimised power draw for cooler, more efficient system operation
Designed with efficiency in mind, the drive operates with low power requirements to keep your system running cool. When the system is idle, power draw drops to just 55 mW, and it falls further to a mere 3 mW in device sleep mode. This low power footprint makes it an excellent choice for thermal-constrained environments, maintaining stable operation within its 0°C to 70°C operating temperature range.
| Active Read Power | 4.0 W |
| Active Write Power | 3.7 W |
| Idle Power | 55 mW |
| Device Sleep Power | 3 mW |
Long-term data protection with 400 TBW endurance and hardware encryption
Built with Samsung V-NAND TLC, the drive is rated for an endurance of 400 TBW (Terabytes Written) and a mean time between failures (MTBF) of 1,500,000 hours, ensuring long-term reliability. Its physical design is highly robust, offering shock resistance up to 1,500G for 0.5ms across three axes, which protects your data against physical impacts. Data security is managed at the hardware level with support for AES 256-bit Full Disk Encryption, TCG/Opal V2.0, and Encrypted Drive (IEEE1667) standards. Additionally, the drive is backed by a 3-year warranty, providing peace of mind for your storage investment.